Semiconductor device and manufacturing method of the same

摘要

An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.

主权项

1. A semiconductor device comprising:
a first conductive film; a second conductive film over the first conductive film; a first insulating film over the first conductive film and the second conductive film; a semiconductor film provided over the first insulating film; a third conductive film over the semiconductor film; a fourth conductive film over the third conductive film; a second insulating film covering the semiconductor film, the third conductive film and the fourth conductive film; a pixel electrode provided over the second insulating film and electrically connected to the semiconductor film; a transistor using a first portion of the first conductive film as a gate electrode, a first portion of the third conductive film as a source electrode and a first portion of the first insulating film as a gate dielectric; and a storage capacitor using a second portion of the third conductive film as an upper electrode, a second portion of the first conductive film as a lower electrode, and a second portion of the first insulating film as a dielectric, wherein an entirety of the second conductive film overlaps with the first conductive film while the first portion of the first conductive film and the second portion of the first conductive film do not overlap with the second conductive film, wherein an entirety of the fourth conductive film overlaps with the third conductive film while the first portion of the third conductive film and the second portion of the third conductive film do not overlap with the fourth conductive film, wherein the semiconductor film does not overlap with the second conductive film, and wherein the storage capacitor is transparent such that a light passes through the storage capacitor from one of the first insulating film and the second insulating film to the other of the first insulating film and the second insulating film.