| 发明名称 | Laser ablation technique for electrical contact to buried electrically conducting layers in diamond | ||
| 摘要 | A method of laser ablation for electrical contact to a buried electrically conducting layer in diamond comprising polishing a single crystal diamond substrate having a first carbon surface, implanting the diamond with a beam of 180 KeV followed by 150 KeV C+ ions at fluencies of 4×1015 ions/cm2 and 5×1015 ions/cm2 respectively, forming an electrically conducting carbon layer beneath the first carbon surface, and ablating the single crystal diamond which lies between the electrically conducting layer and the first carbon surface. | ||
| 申请公布号 | US9040345(B2) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201313801495 | 申请日期 | 2013.03.13 |
| 申请人 | The United States of America, as represented by the Secretary of the Navy | 发明人 | Pate Bradford B.;Ray Matthew P.;Baldwin Jeffrey W. |
| 分类号 | H01L21/00;H05K3/46;B23K26/00;B23K26/06;B23K26/36;B23K26/40;H01L23/373;H05K3/00 | 主分类号 | H01L21/00 |
| 代理机构 | US Naval Research Laboratory | 代理人 | US Naval Research Laboratory ;Hunnius Stephen T. |
| 主权项 | 1. A method of laser ablation for electrical contact to a buried electrically conducting layer in diamond comprising: polishing a single crystal diamond substrate having a first carbon surface; implanting the diamond with a beam of 180 KeV followed by 150 KeV C+ ions at fluencies of 4×1015 ions/cm2 and 5×1015 ions/cm2 respectively; forming an electrically conducting carbon layer beneath the first carbon surface; and ablating the single crystal diamond which lies between the electrically conducting layer and the first carbon surface. | ||
| 地址 | Washington DC US | ||