Diode-based devices and methods for making the same

摘要

In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

主权项

1. A method of forming a diode, the method comprising:
depositing a layer of a dielectric material over a substrate, the dielectric material having a dielectric surface distal from the substrate; patterning a first opening in the dielectric material to expose a first portion of the substrate, the first opening being through the dielectric surface of the dielectric material, the first opening having an aspect ratio of at least 1; forming a first bottom diode region by growing a compound semiconductor material that is lattice mismatched to the substrate in and above the first opening, the first bottom diode region having a first sidewall surface extending above and away from the dielectric surface of the dielectric material; forming a first active diode region directly adjacent the first sidewall surface of the first bottom diode region, the first active diode region having a second sidewall surface extending above and away from the dielectric surface of the dielectric material; and forming a top diode region directly adjacent the second sidewall surface of the first active diode region in a plane parallel to the dielectric surface of the dielectric material intersecting the first bottom diode region, the first active diode region, and the top diode region.