发明名称 Semiconductor device and method of operating the same
摘要 A semiconductor device includes first memory blocks arranged in a longitudinal direction, and including a plurality of strings, wherein the strings are formed along a vertical direction, and the strings adjacent to each other share bit lines or source lines with each other, each string including a drain selection transistor coupled to an odd drain selection line or an even drain selection line, memory cells coupled to word lines, and a source selection transistor coupled to an odd source selection line or an even source selection line, page buffers suitable for storing data, a selection switch unit suitable for transferring the data stored in the page buffers or various voltages supplied from an external source to the bit lines and the source lines; and a control circuit suitable for controlling the page buffers and the selection switch unit.
申请公布号 US9042177(B2) 申请公布日期 2015.05.26
申请号 US201314092698 申请日期 2013.11.27
申请人 SK Hynix Inc. 发明人 Aritome Seiichi
分类号 G11C16/04;G11C16/16;G11C16/26;G11C16/24;G11C16/10 主分类号 G11C16/04
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. A semiconductor device comprising: first memory blocks arranged in a longitudinal direction, and including a plurality of strings, wherein the strings are formed along a vertical direction, and the strings adjacent to each other share bit lines or source lines with each other, each string including a drain selection transistor coupled to an odd drain selection line or an even drain selection line, memory cells coupled to word lines, and a source selection transistor coupled to an odd source selection line or an even source selection line; page buffers suitable for storing data; a selection switch unit suitable for transferring the data stored in the page buffers or various voltages supplied from an external source to the bit lines and the source lines; and a control circuit suitable for controlling the page buffers and the selection switch unit.
地址 Gyeonggi-do KR