| 发明名称 | Advanced low k cap film formation process for nano electronic devices | ||
| 摘要 | A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. | ||
| 申请公布号 | US9040411(B2) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201414194036 | 申请日期 | 2014.02.28 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBALFOUNDRIES INC. | 发明人 | Grill Alfred;Herman Joshua L.;Nguyen Son;Ryan E. Todd;Shobha Hosadurga K. |
| 分类号 | H01L21/4763;H01L21/31;H01L21/02;C23C16/32;C23C16/56;H01L21/768 | 主分类号 | H01L21/4763 |
| 代理机构 | Scully, Scott, Murphy & Presser, P.C. | 代理人 | Scully, Scott, Murphy & Presser, P.C. ;Percello, Esq. Louis J. |
| 主权项 | 1. A method of forming a dielectric film comprising: providing at least a carbon-rich carbosilane precursor into a reactor chamber; and depositing a dielectric film consisting of atoms of Si, C and H or Si, C, H and nitrogen and having a dielectric constant of less than, or equal to, about 4.5 from the carbon-rich carbosilane precursor onto a surface of a substrate, said dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C. | ||
| 地址 | Armonk NY US | ||