Semiconductor light emitting device and method for manufacturing the same

摘要

A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

主权项

1. A light emitting device comprising:
a first conductive type semiconductor layer; a first delta doped layer on the first conductive type semiconductor layer; a super lattice structure on the first delta doped layer; an active layer on the super lattice layer; a second conductive type cladding layer on the active layer; and a second conductive type semiconductor layer on the second conductive type cladding layer, wherein a ratio of a thickness of the super lattice structure to a thickness of the first delta doped layer is in a range of about 1 to 100.