| 发明名称 | Graphene-based frequency tripler | ||
| 摘要 | A frequency tripler device is disclosed. The frequency tripler device includes a first graphene based field effect transistor (FET) of a first dopant type, having a gate, a drain, and a source, and a second graphene based FET of a second dopant type, having a gate, a drain, and a source, the gate of the first FET coupled to the gate of the second FET and coupled to an input signal having an alternating current (AC) signal of a first frequency, the combination of the first and second FETs generates an output signal with a dominant AC signal of a frequency of about three times the first frequency. | ||
| 申请公布号 | US9041440(B2) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201414195843 | 申请日期 | 2014.03.03 |
| 申请人 | Purdue Research Foundation | 发明人 | Appenzeller Joerg;Chen Hong-yan |
| 分类号 | H03B19/00;H01L29/16;H01L27/092;H03B19/14 | 主分类号 | H03B19/00 |
| 代理机构 | Maginot, Moore & Beck, LLP | 代理人 | Maginot, Moore & Beck, LLP |
| 主权项 | 1. A frequency tripler device, comprising: a first graphene based field effect transistor (FET) of a first dopant type, having a gate, a drain, and a source; and a second graphene based FET of a second dopant type, having a gate, a drain, and a source, wherein the gate of the first FET coupled to the gate of the second FET and coupled to an input signal having an alternating current (AC) signal component of a first frequency, the combination of the first and second FETs generate an output signal with a dominant AC signal of a frequency of about three times the first frequency. | ||
| 地址 | West Lafayette IN US | ||