Semiconductor device

摘要

A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n+-source region formed in an upper portion of an n−-drift layer. An interlayer insulating film covers the gate electrode. An Al source electrode extends on the interlayer insulating film. An Al gate pad is connected to the gate electrode. A barrier metal layer that prevents diffusion of aluminum is interposed between the source electrode and the interlayer insulating film, and between the gate pad and the gate electrode.

主权项

1. A semiconductor device, comprising:
a main transistor cell with a gate insulating film formed on a silicon carbide semiconductor layer, a gate electrode formed on said gate insulating film, and a source region that is an impurity region formed in an upper portion of said semiconductor layer; an interlayer insulating film in direct contact with said gate electrode; a source electrode connected to said source region while extending over said interlayer insulating film; a gate pad connected to said gate electrode; and a barrier metal layer interposed between said source electrode and said interlayer insulating film, and between said gate pad and said gate electrode, said barrier metal layer formed both over said source region and under said gate pad, said barrier metal layer contacting a horizontal surface of said interlayer insulating film.