发明名称 |
Interdigitated chip capacitor assembly |
摘要 |
An interdigitated chip capacitor (“IDC”) assembly including an IDC having a semiconductor block with a top portion, a bottom portion opposite the top portion, a plurality of sidewall portions extending between the top and bottom portions, and a plurality of terminals located on the sidewall portions; and a substrate having a top portion with a plurality of generally flat, vertically extending, nonconductive abutment surfaces thereon, the sidewall portions of the IDC being abuttingly engaged with at least some of the plurality of abutment surfaces. |
申请公布号 |
US9039427(B2) |
申请公布日期 |
2015.05.26 |
申请号 |
US201313767009 |
申请日期 |
2013.02.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Rapales Allan Jerome Daen;Camenforte, III Floro Lopez;Kwo John Paul Quianzon |
分类号 |
H01R12/00;H01G2/06;H01G4/232;H05K1/18;H01G4/30 |
主分类号 |
H01R12/00 |
代理机构 |
|
代理人 |
Shaw Steven A.;Cimino Frank D. |
主权项 |
1. An interdigitated chip capacitor (“IDC”) assembly comprising:
an IDC comprising:
a semiconductor block with a top portion, a bottom portion opposite said top portion and a plurality of sidewall portions extending between said top and bottom portions; anda plurality of terminals located on said sidewall portions; and a substrate a top portion with a plurality of nonconductive vertically extending abutment surfaces thereon, further comprising a plurality of recess wall portions defining a central recess therein, wherein said substrate top portion comprises a plurality of grooves projecting outwardly from said central recess; said sidewall portions of said IDC being abuttingly engaged with at least some of said plurality of abutment surfaces. |
地址 |
Dallas TX US |