发明名称 |
PATIN DE POLISSAGE MULTIFONCTION |
摘要 |
<p>The polishing pad is suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten. The polishing pad includes a polymeric matrix; and the polymeric matrix being a polyurethane reaction product of a polyol blend, a polyamine or polyamine mixture and toluene diisocyanate. The polyol blend is a mixture of 15 to 77 weight percent total polypropylene glycol and polytetramethylene ether glycol; and the mixture of polypropylene glycol and polytetramethylene ether glycol having a weight ratio of the polypropylene glycol to the polytetramethylene ether glycol from a 20 to 1 ratio to a 1 to 20 ratio. The polyamine or polyamine mixture is 8 to 50 weight percent; and the toluene diisocyanate is 15 to 35 weight percent total monomer or partially reacted toluene diisocyanate monomer.</p> |
申请公布号 |
FR2948308(B1) |
申请公布日期 |
2015.05.22 |
申请号 |
FR20100056116 |
申请日期 |
2010.07.26 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. |
发明人 |
KULP MARY JO;SIMON ETHAN SCOTT |
分类号 |
B24D11/00 |
主分类号 |
B24D11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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