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经营范围
发明名称
NAND LOGIC WORD LINE SELECTION
摘要
<p>DRAM에서 워드 라인 구동기를 선택하기 위한 NAND 아키텍처가 개시된다. 낮은, 중간 및 높은 범위들에서 개별적으로 디코딩된 어드레스들이 최종 워드 라인 구동기를 선택하는 데 사용된다. 워드 라인 구동기의 출력은 선택 해제된 워드 라인에 대해서는 접지에 대해 음인 전위에 있고, 선택된 워드 라인에 대해서는 전원 전위보다 더 양인 양 전위에 있다.</p>
申请公布号
KR101522479(B1)
申请公布日期
2015.05.22
申请号
KR20137015765
申请日期
2011.11.22
申请人
发明人
分类号
G11C11/4063
主分类号
G11C11/4063
代理机构
代理人
主权项
地址
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