NONVOLATILE MEMORY DEVICES AND DRIVING METHODS THEREOF

摘要

Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

主权项

1. A nonvolatile memory device, comprising:
a memory cell array including a plurality of cell strings formed in a direction perpendicular to a substrate layer, each of the plurality of cell strings is connected between the substrate layer and a corresponding bit line, wherein each of the plurality of cell strings comprises:
at least one string selection transistor connected to a string selection line;a plurality of cell transistors, each of cell transistors is connected in common with a word line of a corresponding layer; andat least one ground selection transistor connected to a ground selection line for connecting the plurality of cell transistors to the substrate layer; a decoder configured to drive at least one of the string selection line and the ground selection line in at least two directions.