NON-VOLATILE MEMORY DEVICE AND MANUFACTURING THE SAME

摘要

A nonvolatile memory device according to the embodiment of the present invention includes a channel region which is vertically extended on the upper side of a substrate, gate electrodes and interlayer dielectric layers which are alternatively stacked on the substrate along the outer sidewall of the channel region, a gate dielectric layer which includes a tunneling layer, a charge storage layer and a blocking layer including a low dielectric layer and a high dielectric layer near the charge storage layer which are successively arranged between the channel region and the gate electrodes, and an anti-oxidation layer which is arranged between the blocking layer and the gate electrodes and prevents the oxidation of the gate electrodes.