主权项 |
1. A method to form a selector device, the method comprising:
forming a first layer,
wherein the first layer is operable as a first electrode,wherein the first layer comprises a first Fermi level; forming a second layer disposed on the first layer,
wherein the second layer comprises a dielectric layer,wherein the second layer comprises a material having a first band gap,wherein the first band gap has a first conduction band minimum,wherein the second layer is doped with a first doping material to form traps at energy levels between the first conduction band minimum and a first energy trap level,wherein the first energy trap level is between 0.3 and 0.7 eV higher than the first Fermi level; forming a third layer above the second layer,
wherein the third layer comprises a dielectric layer,wherein the third layer comprises a material different from that of the second layer,wherein the third layer comprises a material having a second band gap,wherein the second band gap is smaller than the first band gap; forming a fourth layer above the third layer,
wherein the fourth layer comprises a dielectric layer,wherein the fourth layer comprises a material having a third band gap,wherein the third band gap has a third conduction band minimum,wherein the fourth layer is doped with a second doping material to form traps at energy levels between the third conduction band minimum and a second energy trap level; and forming a fifth layer above the fourth layer,
wherein the fifth layer is operable as a second electrode. |