COMPOUND SEMICONDUCTOR SOLAR CELL

摘要

Provided is a compound semiconductor solar cell (2) with improved conversion efficiency. The compound semiconductor solar cell includes a substrate (4), a back electrode (6) disposed on the substrate, a p-type compound semiconductor light absorber layer (8) disposed on the back electrode, an n-type compound semiconductor buffer layer (10) disposed on the p-type compound semiconductor light absorber layer, and a transparent electrode (12) disposed on the n-type compound semiconductor buffer layer. The p-type compound semiconductor light absorber layer (8) is formed of (AgxCu1-x)2aZnb(GeySn1-y)c(S1-zSez)4, wherein 0≦x≦1, 0≦y≦1, 0≦z≦10.5≦a≦1.5, 0.5≦b≦1.5, and 0.5≦c≦1.5. The n-type compound semiconductor buffer layer (10) contains at least one of tin and germanium. The n-type compound semiconductor buffer layer (10) has a lower tin and germanium concentration than the p-type compound semiconductor light absorber layer (8).

主权项

1. A compound semiconductor solar cell comprising:
a substrate; a back electrode disposed on the substrate; a p-type compound semiconductor light absorber layer disposed on the back electrode; an n-type compound semiconductor buffer layer disposed on the p-type compound semiconductor light absorber layer; and a transparent electrode disposed on the n-type compound semiconductor buffer layer, wherein the p-type compound semiconductor light absorber layer comprises
(AgxCu1-x)2aZnb(GeySn1-y)c(S1-zSez)4 wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, 0.5≦a≦1.5, 0.5≦b≦1.5, and 0.5≦c≦1.5, wherein the n-type compound semiconductor buffer layer contains at least one of tin and germanium, and wherein the n-type compound semiconductor buffer layer has a lower tin and germanium concentration than the p-type compound semiconductor light absorber layer.