SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a deposition method of depositing a gallium oxide film by using a DC sputtering method, and provide a manufacturing method of a semiconductor device using a gallium oxide film as an insulation layer such as a gate insulation layer of a transistor.SOLUTION: A semiconductor device manufacturing method comprises forming an insulation film by using an oxide target composed of a gallium oxide (represented as GaOx) in a DC sputtering method or a DC pulse sputtering method. The oxide target is composed of GaOx where x is less than 1.5, favorably 0.01 or more and 0.5 or less, and further favorably 0.1 or more and 0.2 or less. The oxide target has conductivity and sputtering is performed in an oxygen gas atmosphere or in an atmosphere of a mixed gas of an oxygen gas with an inert gas such as argon.