| 摘要 |
A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45 % Ge, from 2 to 16 % Sb, from 48 to 55 % Te, from 3 to 15 % carbon and from 1 to 10 % nitrogen, wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell. |
