NON-VOLATILE MEMORY

摘要

A non-volatile memory includes a memory unit. The memory unit includes a first word line, a second word line, a control line, a logic circuit, a bit line, a first cell, and a second cell. The logic circuit has a first input terminal connected to the first word line, a second input terminal connected to the second word line, and an output terminal connected to the control line. The first cell has a control terminal connected to the first word line, a first terminal connected to the control line, and a second terminal selectively connected to the bit line. The second cell has a control terminal connected to the second word line, a first terminal connected to the control line, and a second terminal selectively connected to the bit line.

主权项

1. A non-volatile memory comprising a first memory unit, the first memory unit comprising:
a first word line; a second word line; a first control line; a first logic circuit having a first input terminal connected to the first word line, a second input terminal connected to the second word line, and an output terminal connected to the first control line, wherein if one of the first word line and the second word line is a selected word line, the output terminal of the first logic circuit provides a first voltage level to the first control line, wherein if the first word line and the second word line are non-selected word lines, the output terminal of the first logic circuit provides a second voltage level to the first control line; a first bit line; a first cell having a control terminal connected to the first word line, a first terminal connected to the first control line, and a second terminal selectively connected to the first bit line; and a second cell having a control terminal connected to the second word line, a first terminal connected to the first control line, and a second terminal selectively connected to the first bit line.