Semiconductor Device having Voids and Method of Forming Same

摘要

A method embodiment includes forming a hard mask over a dielectric layer and forming a first metal line and a second metal line extending through the hard mask into the dielectric layer. The method further includes removing the hard mask, wherein removing the hard mask defines an opening between the first metal line and the second metal line. A liner is then formed over the first metal line, the second metal line, and the dielectric layer, wherein the liner covers sidewalls and a bottom surface of the opening.

主权项

1. A method for forming a semiconductor device comprising:
forming a hard mask over a first dielectric layer; forming a first conductive line and a second conductive line extending through the hard mask into the first dielectric layer; removing the hard mask, wherein the removing the hard mask defines an opening between the first conductive line and the second conductive line; and forming a first liner over the first conductive line, the second conductive line, and the first dielectric layer, wherein the first liner covers sidewalls and a bottom surface of the opening.