| 发明名称 |
VALVE MAIN UNIT AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A valve main unit, in which a high pressure valve is to be provided, includes a channel for hydrogen gas. An internal surface of the channel is constituted by an oxidation layer formed by performing anodizing on an aluminum-based alloy. The oxidation layer of the channel is formed by performing the anodizing under a condition in which the oxidation layer with a thickness of 8 μm or less is formed at an external surface of the valve main unit, the external surface having an opening communicating with the channel. |
| 申请公布号 |
US2015137022(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201414541506 |
申请日期 |
2014.11.14 |
| 申请人 |
JTEKT CORPORATION ;TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
SUGIYAMA Kazuhisa;NISHI Koji;INADA Yutaka;OKAWACHI Eiji;YAMASHITA Akira |
| 分类号 |
F16K25/04;C25D11/04 |
主分类号 |
F16K25/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A valve main unit in which a high pressure valve is to be provided, comprising a channel for hydrogen gas,
wherein an internal surface of the channel is constituted by an oxidation layer formed by performing anodizing on an aluminum-based alloy; and the oxidation layer of the channel is formed by performing the anodizing under a condition in which the oxidation layer with a thickness of 8 μm or less is formed at an external surface of the valve main unit, the external surface having an opening communicating with the channel. |
| 地址 |
Osaka JP |
