发明名称 HIGH ENERGY ION IMPLANTER, BEAM CURRENT ADJUSTER, AND BEAM CURRENT ADJUSTMENT METHOD
摘要 A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.
申请公布号 US2015136996(A1) 申请公布日期 2015.05.21
申请号 US201414549016 申请日期 2014.11.20
申请人 SEN Corporation 发明人 Inada Kouji;Kato Kouji
分类号 H01J37/317;H01J37/147;H01J37/21 主分类号 H01J37/317
代理机构 代理人
主权项 1. A high energy ion implanter comprising: a high energy multistage linear acceleration unit; a beamline component arranged upstream or downstream of the high energy multistage linear acceleration unit to form a focus point of an ion beam; and a variable aperture device disposed at the focus point or a vicinity thereof to adjust a beam width of the ion beam in a direction perpendicular to a focusing direction of the ion beam at the focus point in order to control an implanting beam current.
地址 Tokyo JP