发明名称 |
HIGH ENERGY ION IMPLANTER, BEAM CURRENT ADJUSTER, AND BEAM CURRENT ADJUSTMENT METHOD |
摘要 |
A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit. |
申请公布号 |
US2015136996(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201414549016 |
申请日期 |
2014.11.20 |
申请人 |
SEN Corporation |
发明人 |
Inada Kouji;Kato Kouji |
分类号 |
H01J37/317;H01J37/147;H01J37/21 |
主分类号 |
H01J37/317 |
代理机构 |
|
代理人 |
|
主权项 |
1. A high energy ion implanter comprising:
a high energy multistage linear acceleration unit; a beamline component arranged upstream or downstream of the high energy multistage linear acceleration unit to form a focus point of an ion beam; and a variable aperture device disposed at the focus point or a vicinity thereof to adjust a beam width of the ion beam in a direction perpendicular to a focusing direction of the ion beam at the focus point in order to control an implanting beam current. |
地址 |
Tokyo JP |