DOPING CONTROL OF SYNTHETIC DIAMOND MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a production method of a synthetic diamond material.SOLUTION: The method of the invention includes: a step of injecting process gas in a plasma chamber; a step of making plasma by forwarding a microwave into a plasma chamber by a microwave bond structure; and in addition, a step of growing a synthetic CVD diamond material on a growth surface region. The process gas includes a specified dopant in a gas phase, and the dopant has a concentration of 0.01 ppm or more and/or 0.3 ppm or more of nitrogen. A gas flow system provided facing the growth face region, includes a gas inlet with a gas inlet nozzle constituted so as to inject the process gas to the growth face region. The process gas is injected to the growth face region with a specified a whole gas flow amount and/or to the plasma chamber through the gas inlet nozzle with 1 to 100 Reynold's number.