| 摘要 |
The present invention provides three waveguide structures, comprising a protruding waveguide structure, a buried waveguide structure, and a heavily-deposited waveguide structure. The three waveguide structures are all used in a straight waveguide part of an arrayed waveguide of an SOI-based arrayed waveguide grating. The protruding waveguide structure comprises two first end portions disposed in an axial symmetric manner, and each of the first end portions is sequentially divided into a first region, a second region, and a third region near the axial symmetric direction. The waveguide structure comprises a first silicon substrate layer, a second silicon substrate layer, a first silicon dioxide layer, a second silicon dioxide layer, and a first silicon waveguide layer. Also provided are manufacturing methods corresponding to the waveguide structures, and waveguide coupling structures. The waveguide structures and the coupling structures thereof provided in the present invention have the advantages of small size, low polarization relevance and low-temperature sensibility, has a crosstalk value higher than 25dB, meet requirements of a passive optical network system, and provide the feasibility of the commercialization of the arrayed waveguide grating. |
