发明名称 |
METHOD OF FORMING WIRINGS |
摘要 |
A method of manufacturing a wiring includes sequentially forming a first insulation layer, a first layer, and a second layer on a substrate, etching an upper portion of the second layer a plurality of times to form a second layer pattern including a first recess having a shape of a staircase, etching a portion of the second layer pattern and a portion of the first layer under the first recess to form a first layer pattern including a second recess having a shape of a staircase similar to the first recess, etching a portion of the first layer pattern under the second recess to form a first opening exposing a portion of a top surface of the first insulation layer, etching the exposed portion of the first insulation layer to form a second opening through the first insulation layer, and forming a wiring filling the second opening. |
申请公布号 |
US2015140810(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201414497501 |
申请日期 |
2014.09.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE Sang-Hyun;KIM Myeong-Cheol;LEE Yoo-Jung;KIM IL-Sup;PARK Seung-Ju |
分类号 |
H01L21/768;H01L21/311 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a wiring, the method comprising:
sequentially forming a first insulation layer, a first layer, and a second layer on a substrate; etching an upper portion of the second layer a plurality of times to form a second layer pattern including a first recess having a shape of a staircase in which a center portion is relatively low; etching a portion of the second layer pattern and a portion of the first layer under the first recess to form a first layer pattern including a second recess having a shape of a staircase similar to that of the first recess; etching a portion of the first layer pattern under the second recess until a top surface of the first insulation layer is exposed to form a first opening exposing a portion of the first insulation layer; etching the exposed portion of the first insulation layer to form a second opening through the first insulation layer; and forming a wiring filling the second opening. |
地址 |
Suwon-si KR |