INTEGRATED CIRCUIT AND INTERCONNECT, AND METHOD OF FABRICATING SAME

摘要

The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC includes at least one trench within a dielectric layer disposed on a substrate. The trench is conformally coated with a liner and seed layer, and includes an interconnect within. The interconnect includes a hard mask on the sidewalls of the interconnect.

主权项

1. A method of fabricating an interconnect in an integrated circuit, the method comprising:
conformally coating a trench with a liner and seed layer, the trench being within a dielectric layer disposed on a substrate; depositing a hard mask on the liner and seed layer; masking and patterning the trench to expose the hard mask; removing exposed areas of the hard mask to expose areas of the liner and seed layer; electrolytic metal plating the exposed areas of the liner and seed layer to form an interconnect; and planarizing the interconnect with a top surface of the trench.