| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A semiconductor device includes: active fins protruding from an active layer and extending in a first direction; a gate structure on the active fins extending in a second direction intersecting the first direction; and a spacer on at least one side of the gate structure, wherein each of the active fins includes a first region and a second region adjacent to the first direction in the first direction, and a width of the first region in the second direction is different from a width of the second region in the second direction. |
| 申请公布号 |
US2015137262(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201414465968 |
申请日期 |
2014.08.22 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Baek Kang-Hyun;Park Sung-Hyun;Baek Sang-Hoon;Song Tae-Joong |
| 分类号 |
H01L29/78;H01L27/11 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
active fins protruding from an active layer and extending in a first direction; a gate structure on the active fins and extending in a second direction intersecting the first direction; and a spacer on at least one side of the gate structure, wherein each of the active fins comprises a first region and a second region adjacent to the first region in the first direction, and a width of the first region in the second direction is different from a width of the second region in the second direction. |
| 地址 |
Suwon-si KR |
