发明名称 |
TFT ARRAY SUBSTRATE, MANUFACTURING METHOD OF THE SAME AND DISPLAY DEVICE |
摘要 |
According to embodiments of the invention, a TFT array substrate, a manufacturing method of the TFT array substrate and a display device are provided. The method comprises: depositing a metal film on a substrate, and forming a gate electrode and a gate line; forming a gate insulating layer and a passivation layer on the substrate; depositing a transparent conductive layer, a first source/drain metal layer and a first ohmic contact layer, and forming a drain electrode, a pixel electrode, a data line, and a first ohmic contact layer pattern provided on the drain electrode; and depositing a semiconductor layer, a second ohmic contact layer and a second source/drain metal layer, and forming a source electrode, a second ohmic contact layer pattern provided below the source electrode, and a semiconductor channel between the source electrode and the drain electrode. |
申请公布号 |
US2015137126(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201514610008 |
申请日期 |
2015.01.30 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. ;BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
SHEN Qiyu |
分类号 |
H01L27/12;H01L29/786;H01L29/66 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A TFT array substrate, wherein the TFT array substrate comprises a plurality of gate lines and a plurality of date lines formed on a substrate, the gate lines and the data lines intersect with each other to define a plurality of pixel units, and each of the pixel units comprises a TFT and a pixel electrode; and
wherein the TFT comprises: a gate electrode formed on the substrate; a gate insulating layer and a passivation layer formed in this order on the substrate and covering the gate electrode; a drain electrode formed on the passivation layer; a first ohmic contact layer pattern formed on the drain electrode; a semiconductor layer formed on both of the first ohmic contact layer pattern and the passivation layer; a second ohmic contact layer pattern formed on the semiconductor layer and separated from the drain electrode and the first ohmic contact layer pattern; and a source electrode formed on the second ohmic contact layer pattern. |
地址 |
Beijing CN |