发明名称 SEMICONDUCTOR ISOLATION STRUCTURE AND METHOD OF MANUFACTURE
摘要 A method of formation of an isolation structure for vertical semiconductor devices, the resulting isolation structure, and a memory device to prevent leakage among adjacent vertical semiconductor devices are described.
申请公布号 US2015140781(A1) 申请公布日期 2015.05.21
申请号 US201514605100 申请日期 2015.01.26
申请人 MICRON TECHNOLOGY, INC. 发明人 Karda Kamal;Mouli Chandra
分类号 H01L21/762;H01L27/108 主分类号 H01L21/762
代理机构 代理人
主权项 1. (canceled)
地址 Boise ID US