LIGHT-EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREFOR

摘要

A light-emitting diode chip and a manufacturing method therefor. The light-emitting diode chip comprises: an epitaxial layer provided with a concave-convex microstructure; a patterned first current expansion layer (304) formed on the convex surface of the epitaxial layer; and a second current expansion layer (305) covering the upper surface of the patterned first current expansion layer (304) and the concave-convex surface of the epitaxial layer of the non-film-covered first current expansion layer (304). The formed double current expansion layers matching the epitaxial layer provided with the concave-convex microstructure can reduce the occurring probability of total reflection, reduce inner reflection and absorption, improve the expansibility of a current, enhance the injection efficiency of the current, and low a working voltage of a device, thereby enhancing the light-emitting efficiency and the brightness of an LED.