| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a field-effect transistor by which an asymmetric recess structure can be introduced in a simple and convenient method without sacrificing the productivity.SOLUTION: A field-effect transistor has an asymmetric recess structure, and comprises a buffer layer 2, a channel layer 3, a barrier layer 4, a passivation layer 5, a first ohmic cap layer 6 and a second ohmic cap layer 7 which are stacked on a semiconductor crystal substrate 1 in this order. In the field-effect transistor, the barrier layer 4 includes a carrier-supply layer 8. The field-effect transistor has: the ohmic cap layers 6 and 7 composed of at least two kinds of semiconductor layers; a drain electrode-side recess region 13 making a recess region between a gate electrode 11 and a drain electrode 10; and a source electrode-side recess region 12 making a recess region between the gate electrode 11 and a source electrode 9. The drain electrode-side recess region 13 is larger than the source electrode-side recess region 12. A stepped portion of the ohmic cap layers 6 and 7 in a drain electrode-side termination part of the drain electrode-side recess region 13 is formed by at least two kinds of semiconductor layers.</p> |
