METHOD FOR FORMING CARBON-CONTAINING LAYER AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for forming a thin film comprises: a step for introducing a substrate into a chamber; a step for injecting hydrocarbon gas and nitrogen gas simultaneously into the chamber; and a step for depositing a carbon-containing thin film including carbon and nitrogen onto the substrate. Thereby the method forms a carbon-containing thin film having a high selection ratio and a uniform thickness. In addition, a method for manufacturing a semiconductor device using the thin film is disclosed herein.