| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate most appropriate for a product such as CCD and a CMOS sensor which require high yield; and provide an evaluation method capable of detecting a semiconductor substrate with respect to whether a striation occurs in a solid-state image sensor for preventing a dark current, white scratches occurring in formation of the solid-state image sensor and the like. <P>SOLUTION: An evaluation method of a semiconductor substrate by a leakage current, comprises: performing an oxygen precipitation heat treatment on the semiconductor substrate; forming PN junction; measuring a diffusion current; and evaluating the semiconductor substrate with respect to a striation by using the diffusion current obtained by the measurement. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
