| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To measure an ion implantation amount at a predetermined depth from a surface, and to reduce influences of a deep layer compared with a surface layer to measure the ion implantation amount with higher accuracy. <P>SOLUTION: Excitation light having energy equal to or more than a bandgap in an ion implantation semiconductor SM as a measurement target is emitted from a light source part 1. A predetermined measurement wave is emitted from a measurement wave generation part 6. The ion implantation semiconductor SM is irradiated with the excitation light and the measurement wave. On the other hand, a part of the measurement wave branches off as a reference wave from the measurement wave before irradiation. A phase of the reference wave is adjusted depending on a depth from a surface whose ion implantation amount is desired to be measured. The reference wave and a reflection wave of the measurement wave at the ion implantation semiconductor SM are multiplexed, and the intensity of the multiplexed wave is detected by a detector 11. In addition, an index value associated with the life of an optical excitation carrier is calculated based on the intensity of the detected wave, and the ion implantation amount is calculated based on given ion implantation amount correspondence information representing correspondence between the index value associated with the life of the optical excitation carrier and the ion implantation amount. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
