TRANSISTOR, METHOD FOR FABRICATING THE SAME AND ELECTRONIC DEVICE INCLUDING THE SAME

摘要

The present technology is to provide a transistor capable of increasing a driving current. A CMOSFET according to the present technology includes an NMOSFET which includes a tensile strained-gate electrode including a first lattice-mismatched silicon layer and a tensile stressed-channel due to a tensile strain and a PMOSFET which includes a compressive strained-gate electrode including a second lattice mismatched silicon layer and a compressive stressed-channel due to compressive strain.