发明名称 MEMORY CONTROL CIRCUIT, MEMORY SYSTEM HAVING THE SAME AND OPERATING METHOD THEREOF
摘要 The present invention relates to a memory control circuit and a memory system including the memory control circuit. The memory control circuit includes: a buffer which stores the input data received from an external source; a random control circuit which receives a part of the input data as seed data and generates to a data enable signal, high, in proportion to the size of the seed data; a random code generation circuit which generates a random code in response to the seed data and the data enable signal; and a data conversion circuit which runs a logical operation with the seed data and the random code to output random data.
申请公布号 KR20150054529(A) 申请公布日期 2015.05.20
申请号 KR20130137076 申请日期 2013.11.12
申请人 SK HYNIX INC. 发明人 KIM, JONG WOON;LEE, SANG CHUL
分类号 G11C27/04;G11C7/00;G11C7/10 主分类号 G11C27/04
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