| 摘要 |
Provided is a semiconductor device. The semiconductor device comprises: a circuit substrate including a first external layer, a second external layer formed in the opposite side of the first external layer, and a plurality of internal layers arranged between the first external layer and the second external layer; and a case accommodating the circuit substrate, where a part of the case is in contact with the first external layer. A plurality of internal layers comprises one or more ground layers. The first external layer is connected to the ground layer through one or more via holes. The case is connected to the ground layer through the first external layer. |
