Method of fabricating high voltage metal-oxide-semiconductor transistor device

摘要

The present invention provides a method of fabricating a HV MOS transistor device, including forming a deep well in a substrate, and the deep well; forming a first doped region in the deep well, and the first doped region, wherein a doping concentration of the first doped region and a doping concentration of the deep well in at least one electric field concentration region has a first ratio, the doping concentration of the first doped region and the doping concentration of the deep well outside the electric field concentration region has a second ratio, and the first ratio is greater than the second ratio; and forming a high voltage well in the substrate, and forming a second doped region and a third doped region respectively in the deep well and in the high voltage well.

主权项

1. A method of fabricating a HV MOS transistor device, comprising:
providing a substrate, wherein the substrate has a first conductive type, and the substrate has at least one electric field concentration region; forming a deep well in the substrate, and the deep well having a second conductive type different from the first conductive type; forming a first doped region in the deep well, and the first doped region having the first conductive type, wherein a doping concentration of the first doped region and a doping concentration of the deep well in the electric field concentration region has a first ratio, the doping concentration of the first doped region and the doping concentration of the deep well outside the electric field concentration region has a second ratio, and the first ratio is greater than the second ratio; and forming a high voltage well in the substrate, and forming a second doped region and a third doped region respectively in the deep well and in the high voltage well, the high voltage well having the first conductive type, and the second doped region and the third doped region having the second conductive type, wherein the first doped region is disposed between the second doped region and the high voltage well, and the electric field concentration region surrounds a part of the third doped region.