Structure for facilitating the simultaneous silicidation of a polysilicon gate and source/drain of a semiconductor device

摘要

A method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a semiconductor substrate (the gate stack comprising a first polysilicon layer, a first nitride layer, and a second polysilicon layer), forming a second nitride layer over an active region in the semiconductor substrate adjacent to the gate stack, performing a chemical mechanical polishing that stops on the first nitride layer and on the second nitride layer, removing the first nitride layer and the second nitride layer, and performing a simultaneous silicidation of the first polysilicon layer and the active region.

主权项

1. A semiconductor device comprising:
a substrate; a gate stack on the substrate, the gate stack comprising a dielectric layer; a first polysilicon layer formed over the dielectric layer, a first nitride layer formed over the first polysilicon layer, the first nitride layer including a horizontal plane defined by a top surface of the first nitride layer; a spacer along a sidewall of the gate stack; an active region within the substrate adjacent to the spacer; a second nitride layer on the active region, the second nitride layer including a horizontal plane defined by a top surface of the second nitride layer, wherein the horizontal plane of the second nitride layer is substantially aligned with the horizontal plane of the first nitride layer.