Method of forming semiconductor device

摘要

A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.

主权项

1. A method of forming a semiconductor device, comprising:
providing at least one gate structure on a substrate, wherein the gate structure comprises a first spacer formed on a sidewall of a gate; depositing a first disposable spacer material layer on the substrate covering the gate structure; etching the first disposable spacer material layer to form a first disposable spacer on the first spacer; depositing a second disposable spacer material layer on the substrate covering the gate structure; etching the second disposable spacer material layer to form a second disposable spacer on the first disposable spacer; removing a portion of the substrate by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure; forming a stress-inducing layer in the recesses; removing the first and second disposable spacers; forming a second spacer on the first spacer; and forming two heavily doped regions in the stress-inducing layer beside the gate structure by using the second spacer as a mask.