发明名称 Anti-fuse circuit in which anti-fuse cell data is monitored, and semiconductor device including the same
摘要 An anti-fuse circuit in which anti-fuse program data may be monitored outside of the anti-fuse circuit and a semiconductor device including the anti-fuse circuit are disclosed. The anti-fuse circuit includes an anti-fuse array, a data storage circuit, and a first selecting circuit. The anti-fuse array includes one or more anti-fuse blocks including a first anti-fuse block having a plurality of anti-fuse cells and the anti-fuse array is configured to store anti-fuse program data. The data storage circuit is configured to receive and store the anti-fuse program data from the anti-fuse array through one or more data buses. The first selecting circuit is configured to output anti-fuse program data of a selected anti-fuse block of the one or more anti-fuse blocks in response to a first selection signal.
申请公布号 US9036441(B2) 申请公布日期 2015.05.19
申请号 US201313793457 申请日期 2013.03.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Oh Jong-Min;Song Ho-Young;Jang Seong-Jin
分类号 G11C17/00;G11C17/18;G11C17/16;G11C29/00 主分类号 G11C17/00
代理机构 Muir Patent Law 代理人 Muir Patent Law
主权项 1. An anti-fuse circuit, comprising: an anti-fuse array including one or more anti-fuse blocks including a first anti-fuse block having a plurality of anti-fuse cells, the anti-fuse array configured to store anti-fuse program data; a data storage circuit configured to receive and store the anti-fuse program data from the anti-fuse array through one or more data buses; and a first selecting circuit configured to output anti-fuse program data of a selected anti-fuse block of the one or more anti-fuse blocks in response to a first selection signal, wherein the anti-fuse program data is configured to be monitored outside of the anti-fuse circuit while the anti-fuse program data is transmitted from the anti-fuse array to the data storage circuit.
地址 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR