Nanometer-scale level structures and fabrication method for digital etching of nanometer-scale level structures

摘要

A ramped etalon cavity structure and a method of fabricating same. A bi-layer stack is deposited on a substrate. The bi-layer stack includes a plurality of bi-layers. Each bi-layer of the plurality of bi-layers includes an etch stop layer and a bulk layer. A three dimensional photoresist structure is formed by using gray-tone lithography. The three dimensional photoresist is plasma etched into the bi-layer stack, thereby generating an etched bi-layer stack. The etched bi-layer stack is chemically etched with a first chemical etchant to generate a multiple-step structure on the substrate, wherein the first chemical etchant stops at the etch stop layer.

主权项

1. A method of fabricating a multiple-step structure on a substrate, the method comprising:
depositing a bi-layer stack on a substrate, the bi-layer stack comprising a plurality of bi-layers, each bi-layer of the plurality of bi-layers comprising an etch stop layer and a bulk layer; forming a three dimensional photoresist structure by using gray-tone lithography; plasma etching the three dimensional photoresist into the bi-layer stack, thereby generating an etched bi-layer stack; and chemically etching the etched hi-layer stack with a first chemical etchant to generate a multiple-step structure on the substrate, wherein the first chemical etchant stops at the etch stop layer.