Method for growing a nitride-based III-V Group compound semiconductor

摘要

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

主权项

1. A method for manufacturing a light-emitting diode, comprising:
providing a plurality of protruded portions and a plurality of recess portions on one main surface of a substrate, wherein each protruded portion is made of a material different in type from that of said substrate and each recess portion is defined as space between a respective pair of the plurality of protruded portions; growing, via a first growth temperature, a first nitride-based III-V Group compound semiconductor layer having a triangle cross section on a bottom surface of each recess portion, the bottom surface of each recess portion being a base of the respective triangle cross section; laterally growing, via a second growth temperature, a second nitride-based III-V Group compound semiconductor layer between each of the plurality of protruded portions on said substrate from said triangle cross sections of said first nitride-based III-V Group compound semiconductor layer, the lateral growth being predominant such that together said first and second nitride-based III-V Group compound semiconductor layers substantially have a respective hexagon cross section between a respective pair of the plurality of protruded portions during the lateral growth, each hexagon cross section being perpendicular to the one main surface; and successively growing a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type on said second nitride-based III-V Group compound semiconductor layer, wherein,
the first growth temperature is lower than that of the second growth temperature.