Methods of forming variable resistive memory devices

摘要

A method of forming a variable resistive memory device includes forming a conductive pattern that alternates with a first insulation pattern along a first direction on a substrate that is parallel with a surface of the substrate, forming a preliminary sacrificial pattern on the conductive pattern that contacts a sidewall of the first insulation pattern, etching the conductive pattern using the preliminary sacrificial pattern as an etch masks to form a preliminary bottom electrode pattern, patterning the preliminary sacrificial pattern and the preliminary bottom electrode pattern to form a sacrificial pattern and a bottom electrode pattern that each include at least two portions which are separated from each other along a second direction intersecting the first direction, and replacing the sacrificial pattern with a variable resistive pattern.

主权项

1. A method of forming a variable resistive memory device, the method comprising:
forming a first insulation pattern on a substrate, such that the first insulation pattern includes portions on either side of a trench; forming a conductive pattern on the substrate; forming a preliminary sacrificial pattern of an insulating material, such that a portion of the preliminary sacrificial pattern is in the trench and contacts a sidewall of at least one of the portions of the first insulation pattern; etching the conductive pattern using the preliminary sacrificial pattern as an etch mask, thereby forming a preliminary bottom electrode pattern; and replacing the sacrificial pattern with a variable resistive pattern.