Method and system for critical dimension uniformity using charged particle beam lithography

摘要

A method for mask data preparation or mask process correction is disclosed in which a set of charged particle beam shots is determined which is capable of forming a pattern on a surface, wherein critical dimension uniformity (CDU) of the pattern is optimized. In some embodiments the CDU is optimized by varying at least two factors. In other embodiments, model-based techniques are used. In yet other embodiments, the surface is a reticle to be used in an optical lithographic process to form a pattern on a wafer, and CDU on the wafer is optimized.

主权项

1. A method for mask data preparation (MDP) or mask process correction (MPC) for use with charged particle beam simulation, the method comprising:
determining a set of charged particle beam shots, wherein the set of shots, when used in a charged particle beam writer, produces a dosage on a resist-coated surface, wherein the dosage on the resist-coated surface forms a pattern on the surface, wherein critical dimension uniformity (CDU) caused by manufacturing variation is optimized by varying at least two factors selected from the group consisting of shot shape, shot size in one dimension or both dimensions, shot position, shot-to-shot spacing, shot overlap, shot dosage before proximity effect correction, dose margin, critical dimension split, sliver reduction, shot count, and write time, and wherein the determining is performed using a computing hardware device.