| 主权项 |
1. An avalanche photodiode detector, comprising:
an absorber region having an absorption layer for receiving incident photons and generating charged carriers, the absorber region comprising a first insulating layer positioned on a substrate, the first insulating layer comprising InAlAs, a second insulating layer positioned above the first insulating layer, the second insulating layer comprising InAlAs, a third insulating layer positioned above the second insulating layer, the third insulating layer comprising InP, an N-doped contact layer positioned above the third insulating layer, the absorption layer positioned above the N-doped contact layer, the absorption layer comprising InGaAs, and a wide band gap window layer positioned above the absorption layer, the wide bandgap window layer comprising InP or InGaAsP; a first pair of contacts positioned on the wide band gap window layer and the N-doped contact layer of the absorber region to control a bias across the absorber region; a multiplier region comprising an N-doped layer comprising InAlAs positioned on the substrate, a multiplication layer positioned on the N-doped layer, the multiplication layer comprising InAlAs, and a P-doped layer comprising InP positioned on the multiplication layer; a second pair of contacts positioned on the P-doped layer of the multiplier region and the substrate to control a bias across the multiplier region; and a metal contact bridge between the N-doped contact layer of the absorber region and the multiplication layer of the multiplier region, the bridge transferring the charged carriers from the absorber region to the multiplier region; wherein the multiplier region is built on a separate mesa structure from the absorber region. |
