发明名称 |
Method for manufacturing inverted metamorphic multijunction solar cells |
摘要 |
A method of fabricating both a multijunction solar cell and an inverted metamorphic multijunction solar cell in a single process using a MOCVD reactor by forming a first multijunction solar cell on a semiconductor substrate; forming a release layer over the first solar cell; forming an inverted metamorphic second solar cell over the release layer; and etching the release layer so as to separate the multijunction first solar cell and the inverted metamorphic second solar cell. |
申请公布号 |
US9035367(B2) |
申请公布日期 |
2015.05.19 |
申请号 |
US201314052454 |
申请日期 |
2013.10.11 |
申请人 |
SolAero Technologies Corp. |
发明人 |
Derkacs Daniel |
分类号 |
H01L29/76;H01L31/0687;H01L31/18 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating both a multijunction solar cell and an inverted metamorphic multijunction solar cell in a single process using a MOCVD reactor comprising:
providing a semiconductor substrate; forming a first multijunction solar cell on said semiconductor substrate; forming a release layer over the first solar cell; forming an inverted metamorphic second solar cell including: (i) growing a first solar subcell having a first band gap on said release layer; (ii) growing a second solar subcell over said first subcell having a second band gap smaller than said first band gap; growing a first grading interlayer over said second solar subcell; (iii) growing a third solar subcell over said grading interlayer having a fourth band gap smaller than said second band gap such that said third solar subcell is lattice mismatched with respect to said second solar subcell; and etching the release layer so as to separate the multijunction first solar cell and the inverted metamorphic second solar cell. |
地址 |
Albuquerque NM US |