Semiconductor device

摘要

A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.

主权项

1. A semiconductor device having a semiconductor element with an electrode on a surface, an electrode member being joined to the electrode, the electrode member including:
a first electrode member including a first insulating support with a first plurality of perforations which pierce through principal planes and first metal posts located in the first plurality of perforations; a second electrode member including a second insulating support with a second plurality of perforations which pierce through principal planes and second metal posts located in the second plurality of perforations; and an insulating plate for electrically insulating the first metal posts in the first electrode member from the second metal posts in the second electrode member, and for integrally joining the first electrode member and the second electrode member.