| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a compact and high-speed magnetic memory which allows write and read by current.SOLUTION: A ferromagnetic structure 10 provided with magnetic domain wall-holding parts 14, 15 at two places is used, a current source 20 is connected to both end parts of the ferromagnetic structure 10, and a voltmeter 30 is connected across one end part and a central part 12 of the ferromagnetic structure 10. Information writing is performed by holding a magnetic domain wall in either of the two magnetic domain wall-holding parts according to a direction of a current flowed from the current source 20. Information reading is performed by flowing unidirectional reading current from the current source and detecting the magnetic domain wall-holding part where the magnetic domain wall is held by output of the voltmeter. A current path during information writing is also used as a current path during the information reading, only one switching element is used for current control, thereby the magnetic memory is made compact. Also, by reading information non-destructively, conduction for returning the magnetic domain wall to its original position after reading is unnecessary.</p> |
