SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a trench semiconductor device in which decrease in withstanding voltage is inhibited and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a first conductivity type first semiconductor region; a second conductivity type second semiconductor region arranged on the first semiconductor region; an insulation film arranged on a bottom and an inner wall of a trench which extends from a top face of the second semiconductor region and pierces the second semiconductor region to reach the first semiconductor region; a control electrode which is arranged inside the trench and opposite to the second semiconductor region across the insulation film and inclines in a manner such that a top face becomes lower from a part contacting a side face of the trench toward a central part of the trench; a first conductivity type third semiconductor region which has a portion opposite to an upper part of the control electrode via the insulation film and is arranged on a top face of the second semiconductor region and around lateral faces of the trench: an interlayer insulation film arranged on the control electrode; and a main electrode arranged on the interlayer insulation film.