| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that allows reducing the chip size.SOLUTION: A nonvolatile semiconductor memory device includes a NAND string having a plurality of memory cells arranged in a first direction and a selection gate provided adjacent, in a first direction, to a first memory cell at the endmost portion of the plurality of memory cells. The nonvolatile semiconductor memory device further includes first air gaps provided between the plurality of memory cells and a second air gap provided between the first memory cell and the selection gate. The height of a top edge of the second air gap in a cross-sectional shape along the first direction is higher than the height of top edges of the first air gaps, and an upper portion of the second air gap bends.</p> |
